1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Infineon Technologies
  6. IPP120N06S4-H1

IPP120N06S4-H1

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IPP120N06S4-H1 Image

The IPP120N06S4-H1 from Infineon Technologies is a MOSFET with Continous Drain Current 120 A, Drain Source Resistance 1.8 to 2.4 Mohms, Drain Source Breakdown Voltage 60 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IPP120N06S4-H1 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IPP120N06S4-H1
  • Manufacturer
    Infineon Technologies
  • Description
    55-60 V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    120 A
  • Drain Source Resistance
    1.8 to 2.4 Mohms
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    208 to 270 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO220-3-1
  • Applications
    Automotive

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products