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IPW60R037CM8

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IPW60R037CM8 Image

The IPW60R037CM8 from Infineon Technologies is a MOSFET with Continous Drain Current 40 to 64 A, Drain Source Resistance 0.031 to 0.068 ohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage ±20 V, Gate Source Threshold Voltage 3.7 to 4.7 V. Tags: Through Hole. More details for IPW60R037CM8 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPW60R037CM8
  • Manufacturer
    Infineon Technologies
  • Description
    600 V, 40 to 64 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    40 to 64 A
  • Drain Source Resistance
    0.031 to 0.068 ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    ±20 V
  • Gate Source Threshold Voltage
    3.7 to 4.7 V
  • Gate Charge
    79 nC
  • Power Dissipation
    329 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO247-3
  • Applications
    Power supplies and converters, PFC stages & LLC resonant converters, High efficiency switching applications, e.g. Server, Telecom, EV Charging, UPS

Technical Documents
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