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IQE013N04LM6SC

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IQE013N04LM6SC Image

The IQE013N04LM6SC from Infineon Technologies is a MOSFET with Continous Drain Current 31 to 205 A, Drain Source Resistance 1.1 to 1.9 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Surface Mount. More details for IQE013N04LM6SC can be seen below.

Product Specifications

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Product Details

  • Part Number
    IQE013N04LM6SC
  • Manufacturer
    Infineon Technologies
  • Description
    40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    31 to 205 A
  • Drain Source Resistance
    1.1 to 1.9 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    20 to 41 nC
  • Power Dissipation
    2.5 to 107 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-WHSON-8
  • Applications
    Drives, Telecom, SMPS, Server, Oring, Battery management

Technical Documents
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