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IQE065N10NM5CG

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The IQE065N10NM5CG from Infineon Technologies is a MOSFET with Continous Drain Current 14 to 85 A, Drain Source Resistance 5.7 to 11 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.2 to 3.8 V. Tags: Surface Mount. More details for IQE065N10NM5CG can be seen below.

Product Specifications

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Product Details

  • Part Number
    IQE065N10NM5CG
  • Manufacturer
    Infineon Technologies
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    14 to 85 A
  • Drain Source Resistance
    5.7 to 11 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.2 to 3.8 V
  • Gate Charge
    34 to 42 nC
  • Power Dissipation
    2.5 to 100 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TTFN-9-1
  • Applications
    Drives, Telecom, SMPS, Server, Oring, Battery management

Technical Documents
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