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IRF7104PbF

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IRF7104PbF Image

The IRF7104PbF from Infineon Technologies is a MOSFET with Continous Drain Current -2.3 A, Drain Source Resistance 190 to 400 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for IRF7104PbF can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRF7104PbF
  • Manufacturer
    Infineon Technologies
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -2.3 A
  • Drain Source Resistance
    190 to 400 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    9.3 to 25 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO8

Technical Documents
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