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IRF7341GTRPbF

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IRF7341GTRPbF Image

The IRF7341GTRPbF from Infineon Technologies is a MOSFET with Continous Drain Current 5.1 A, Drain Source Resistance 43 to 65 milliohm, Drain Source Breakdown Voltage 55 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 V. Tags: Surface Mount. More details for IRF7341GTRPbF can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRF7341GTRPbF
  • Manufacturer
    Infineon Technologies
  • Description
    55 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    5.1 A
  • Drain Source Resistance
    43 to 65 milliohm
  • Drain Source Breakdown Voltage
    55 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 V
  • Gate Charge
    29 to 44 nC
  • Power Dissipation
    2.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO8

Technical Documents
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