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IRF7509PbF

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IRF7509PbF Image

The IRF7509PbF from Infineon Technologies is a MOSFET with Continous Drain Current -2 to 2.7 A, Drain Source Resistance 90 to 200 milliohm, Drain Source Breakdown Voltage -30 to 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1 to 1 V. Tags: Surface Mount. More details for IRF7509PbF can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRF7509PbF
  • Manufacturer
    Infineon Technologies
  • Description
    -30 to 30 V, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -2 to 2.7 A
  • Drain Source Resistance
    90 to 200 milliohm
  • Drain Source Breakdown Voltage
    -30 to 30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1 to 1 V
  • Gate Charge
    7.8 to 11 nC
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    MICRO8

Technical Documents
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