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IRF7907PbF

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IRF7907PbF Image

The IRF7907PbF from Infineon Technologies is a MOSFET with Continous Drain Current 7.3 to 85 A, Drain Source Resistance 9.8 to 20.5 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.35 to 2.35 V. Tags: Surface Mount. More details for IRF7907PbF can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRF7907PbF
  • Manufacturer
    Infineon Technologies
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    7.3 to 85 A
  • Drain Source Resistance
    9.8 to 20.5 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.35 to 2.35 V
  • Gate Charge
    6.7 to 21 nC
  • Power Dissipation
    1.3 to 2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SO8
  • Applications
    Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box

Technical Documents
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