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IRFI4212H-117P

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IRFI4212H-117P Image

The IRFI4212H-117P from Infineon Technologies is a MOSFET with Continous Drain Current 11 A, Drain Source Resistance 58 to 72.5 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for IRFI4212H-117P can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRFI4212H-117P
  • Manufacturer
    Infineon Technologies
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    11 A
  • Drain Source Resistance
    58 to 72.5 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    12 to 18 nC
  • Power Dissipation
    18 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO220
  • Applications
    Class D Audio

Technical Documents
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