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IRHLNS87Y50

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IRHLNS87Y50 Image

The IRHLNS87Y50 from Infineon Technologies is a MOSFET with Continous Drain Current 75 A, Drain Source Resistance 2.5 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 12 V, Gate Source Threshold Voltage 1 to 2.3 V. Tags: Surface Mount. More details for IRHLNS87Y50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRHLNS87Y50
  • Manufacturer
    Infineon Technologies
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    75 A
  • Drain Source Resistance
    2.5 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 12 V
  • Gate Source Threshold Voltage
    1 to 2.3 V
  • Gate Charge
    130 nC
  • Power Dissipation
    125 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Surface Mount
  • Package
    SupIR-SMD
  • Applications
    Point-of-Load (PoL) converters for FPGA, ASIC and DSP core rails, Synchronous rectification, Redundant power distribution

Technical Documents
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