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IRHM57264SE

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The IRHM57264SE from Infineon Technologies is a MOSFET with Continous Drain Current 35 A, Drain Source Resistance 66 milliohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Through Hole. More details for IRHM57264SE can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRHM57264SE
  • Manufacturer
    Infineon Technologies
  • Description
    250 V, 45 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    35 A
  • Drain Source Resistance
    66 milliohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    45 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Through Hole
  • Package
    TO-254AA

Technical Documents
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