1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Infineon Technologies
  6. IRHM9130

IRHM9130

Download Datasheet Request Quote

Note : Your request will be directed to Infineon Technologies.

IRHM9130 Image

The IRHM9130 from Infineon Technologies is a MOSFET with Continous Drain Current -11 A, Drain Source Resistance 325 milliohm, Drain Source Breakdown Voltage -100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Through Hole. More details for IRHM9130 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IRHM9130
  • Manufacturer
    Infineon Technologies
  • Description
    -100 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -11 A
  • Drain Source Resistance
    325 milliohm
  • Drain Source Breakdown Voltage
    -100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    45 nC
  • Power Dissipation
    75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Through Hole
  • Package
    TO-254AA

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products