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IRHNS597064

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The IRHNS597064 from Infineon Technologies is a MOSFET with Continous Drain Current -56 A, Drain Source Resistance 16 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Surface Mount. More details for IRHNS597064 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRHNS597064
  • Manufacturer
    Infineon Technologies
  • Description
    -60 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -56 A
  • Drain Source Resistance
    16 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    200 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Space, Military
  • Package Type
    Surface Mount
  • Package
    SupIR-SMD

Technical Documents
View details on the manufacturer's website
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