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IRLHS6276TRPbF

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IRLHS6276TRPbF Image

The IRLHS6276TRPbF from Infineon Technologies is a MOSFET with Continous Drain Current 9.6 A, Drain Source Resistance 33 to 62 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.5 to 1.1 V. Tags: Surface Mount. More details for IRLHS6276TRPbF can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRLHS6276TRPbF
  • Manufacturer
    Infineon Technologies
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    9.6 A
  • Drain Source Resistance
    33 to 62 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.5 to 1.1 V
  • Gate Charge
    3.1 nC
  • Power Dissipation
    6.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-TSDSON-6
  • Applications
    Charge and discharge switch for battery application, Load/system switch

Technical Documents
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