The ISK018NE1LM7 from Infineon Technologies is an N-Channel Logic Level MOSFET that is ideal for SMPS, server, datacom, and artificial intelligence (AI) applications. It has a drain-source breakdown voltage of over 15 V, a gate threshold voltage of 1.6 V, and a drain-source on-resistance of less than 1.8 milli-ohms. This MOSFET has a continuous drain current of up to 129 A and a power dissipation of less than 39 W. It ensures very low drain-source on-resistance and superior thermal resistance in a single lead-plated, halogen-free package. This JEDEC-qualified MOSFET is optimized for high-performance synchronous rectification purposes, making it suitable for SMPS systems. It has a small footprint that significant saves the space in PCB boards. This RoHS-compliant MOSFET is available in a surface-mount package that measures 2.10 x 2.10 mm.