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SPB17N80C3

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SPB17N80C3 Image

The SPB17N80C3 from Infineon Technologies is a MOSFET with Continous Drain Current 11 to 17 A, Drain Source Resistance 0.25 to 0.67 Mohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.1 to 3.9 V. Tags: Through Hole. More details for SPB17N80C3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SPB17N80C3
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11 to 17 A
  • Drain Source Resistance
    0.25 to 0.67 Mohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.1 to 3.9 V
  • Gate Charge
    88 to 117 nC
  • Power Dissipation
    227 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO 263

Technical Documents
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