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SPB20N60C3

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SPB20N60C3 Image

The SPB20N60C3 from Infineon Technologies is a MOSFET with Continous Drain Current 13.1 to 20.7 A, Drain Source Resistance 0.16 to 0.43 Mohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 2.1 to 3.9 V. Tags: Through Hole. More details for SPB20N60C3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SPB20N60C3
  • Manufacturer
    Infineon Technologies
  • Description
    500-950 V CoolMOS N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    13.1 to 20.7 A
  • Drain Source Resistance
    0.16 to 0.43 Mohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    2.1 to 3.9 V
  • Gate Charge
    87 to 114 nC
  • Power Dissipation
    208 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO 263

Technical Documents
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