IQAA62SC120B1

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The IQAA62SC120B1 from iQXPRZ Power is a MOSFET with Continous Drain Current 62 A, Drain Source Resistance 0.049 ohm, Drain Source Breakdown Voltage 1200 V, Gate Charge 21.6 nC, Switching Speed 40 ns. More details for IQAA62SC120B1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IQAA62SC120B1
  • Manufacturer
    iQXPRZ Power
  • Description
    1200 V, 62 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    62 A
  • Drain Source Resistance
    0.049 ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Charge
    21.6 nC
  • Switching Speed
    40 ns
  • Industry
    Industrial, Commercial

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