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IQIA39N60A3

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The IQIA39N60A3 from iQXPRZ Power is a MOSFET with Continous Drain Current 24 to 39 A, Drain Source Resistance 0.06 to 0.16 ohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.1 to 3.9 V. Tags: Surface Mount. More details for IQIA39N60A3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IQIA39N60A3
  • Manufacturer
    iQXPRZ Power
  • Description
    600 V, 24 to 39 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    24 to 39 A
  • Drain Source Resistance
    0.06 to 0.16 ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.1 to 3.9 V
  • Gate Charge
    252 nC
  • Switching Speed
    15 to 92 ns
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT227
  • Applications
    PC power supplies, Consumer SMPS, Telecom power supplies, Server power supplies, Solar inverters, Welding inverters, Induction heating, Electronics ballast
  • Note
    Input Capacitance :- 6800 pF

Technical Documents
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