IQIA68SC120B3

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The IQIA68SC120B3 from iQXPRZ Power is a MOSFET with Continous Drain Current 68 A, Drain Source Resistance 0.025 ohm, Drain Source Breakdown Voltage 1200 V, Gate Charge 196.8 nC, Switching Speed 40 ns. More details for IQIA68SC120B3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IQIA68SC120B3
  • Manufacturer
    iQXPRZ Power
  • Description
    1200 V, 68 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    68 A
  • Drain Source Resistance
    0.025 ohm
  • Drain Source Breakdown Voltage
    1200 V
  • Gate Charge
    196.8 nC
  • Switching Speed
    40 ns
  • Industry
    Industrial, Commercial

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