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INJ0003AM1

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The INJ0003AM1 from Isahaya Electronics is a MOSFET with Continous Drain Current -200 mA, Drain Source Resistance 2.0 ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.6 to -1.2 V. Tags: Surface Mount. More details for INJ0003AM1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    INJ0003AM1
  • Manufacturer
    Isahaya Electronics
  • Description
    -20 V, -200 mA, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -200 mA
  • Drain Source Resistance
    2.0 ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.6 to -1.2 V
  • Switching Speed
    16 to 110 ns
  • Power Dissipation
    0.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SC-70
  • Applications
    High speed switching, Analog switching
  • Note
    Input Capacitance :- 37 pF

Technical Documents
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