INK0200AC1

Note : Your request will be directed to Isahaya Electronics.

The INK0200AC1 from Isahaya Electronics is a MOSFET with Continous Drain Current 1.0 A, Drain Source Resistance 0.20 ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.4 to 1.3 V. Tags: Surface Mount. More details for INK0200AC1 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    INK0200AC1
  • Manufacturer
    Isahaya Electronics
  • Description
    60 V, 1.0 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.0 A
  • Drain Source Resistance
    0.20 ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.4 to 1.3 V
  • Switching Speed
    25 to 35 ns
  • Power Dissipation
    0.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • Package Type
    Surface Mount
  • Package
    SC-59
  • Applications
    Switching
  • Note
    Input Capacitance :- 230 pF

Technical Documents

Latest MOSFETs

View more products