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ISM06NL1-12

MOSFET by ISOCOM (59 more products)
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The ISM06NL1-12 from ISOCOM is a MOSFET with Continous Drain Current 11.7 A, Drain Source Resistance 0.08 ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Surface Mount. More details for ISM06NL1-12 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ISM06NL1-12
  • Manufacturer
    ISOCOM
  • Description
    60 V, 11.7 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    11.7 A
  • Drain Source Resistance
    0.08 ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    45 nC
  • Switching Speed
    25 to 35 ns
  • Power Dissipation
    25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Military
  • Package Type
    Surface Mount
  • Package
    18 LCC
  • Applications
    Space equipment and systems, Military equipment and systems, Solar Inverters, Power Supplies, High Voltage DC-DC Converters
  • Note
    Input Capacitance :- 1250 pF

Technical Documents
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