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ISMD06CL0-1

MOSFET by ISOCOM (59 more products)
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The ISMD06CL0-1 from ISOCOM is a MOSFET with Continous Drain Current 1.0 to 3.0 A, Drain Source Resistance 0.75 ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 2.0 V. Tags: Surface Mount. More details for ISMD06CL0-1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    ISMD06CL0-1
  • Manufacturer
    ISOCOM
  • Description
    60 V, 1.0 to 3.0 A, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.0 to 3.0 A
  • Drain Source Resistance
    0.75 ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    2.0 V
  • Gate Charge
    3.6 nC
  • Switching Speed
    2 to 18.8 ns
  • Power Dissipation
    1.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial, Military
  • Package Type
    Surface Mount
  • Package
    LCC-6
  • Applications
    Space equipment and systems, Military equipment and systems, Solar Inverters, Power Supplies, High Voltage DC-DC Converters, Solar inverters, LED Lighting power supplies
  • Note
    Input Capacitance :- 145 pF

Technical Documents
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