IRF1404

Note : Your request will be directed to JSMicro Semiconductor.

The IRF1404 from JSMicro Semiconductor is a MOSFET with Continous Drain Current 162 to 230 A, Drain Source Resistance 2.3 to 4.0 milli-ohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for IRF1404 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRF1404
  • Manufacturer
    JSMicro Semiconductor
  • Description
    40 V, 162 to 230 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    162 to 230 A
  • Drain Source Resistance
    2.3 to 4.0 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    190 nC
  • Switching Speed
    20 to 62 ns
  • Power Dissipation
    285 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Input Capacitance :- 7000 pF

Technical Documents

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