IRF740

Note : Your request will be directed to JSMicro Semiconductor.

The IRF740 from JSMicro Semiconductor is a MOSFET with Continous Drain Current 10 A, Drain Source Resistance 0.45 to 0.55 ohm, Drain Source Breakdown Voltage 400 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3.0 to 4.0 V. Tags: Through Hole. More details for IRF740 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRF740
  • Manufacturer
    JSMicro Semiconductor
  • Description
    400 V, 10 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 A
  • Drain Source Resistance
    0.45 to 0.55 ohm
  • Drain Source Breakdown Voltage
    400 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3.0 to 4.0 V
  • Gate Charge
    28 nC
  • Switching Speed
    20 to 138 ns
  • Power Dissipation
    63 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switch Mode Power Supply (SMPS), Uniterruptible Power Supply (UPS), Power Factor Correction (PFC)
  • Note
    Input Capacitance :- 1050 pF

Technical Documents

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