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IRF7530TR

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The IRF7530TR from JSMicro Semiconductor is a MOSFET with Continous Drain Current 1.7 to 2.2 A, Drain Source Resistance 152 to 158 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for IRF7530TR can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRF7530TR
  • Manufacturer
    JSMicro Semiconductor
  • Description
    100 V, 1.7 to 2.2 A, N-Channel, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    1.7 to 2.2 A
  • Drain Source Resistance
    152 to 158 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    18.4 nC
  • Switching Speed
    5.6 to 28 ns
  • Power Dissipation
    1.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Note
    Input Capacitance :- 1050 pF

Technical Documents
View details on the manufacturer's website
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