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IRFB4110

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The IRFB4110 from JSMicro Semiconductor is a MOSFET with Continous Drain Current 130 to 180 A, Drain Source Resistance 4.5 to 5.0 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for IRFB4110 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRFB4110
  • Manufacturer
    JSMicro Semiconductor
  • Description
    100 V, 130 to 180 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    130 to 180 A
  • Drain Source Resistance
    4.5 to 5.0 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    184 nC
  • Switching Speed
    28 to 84 ns
  • Power Dissipation
    240 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Input Capacitance :- 7850 pF

Technical Documents
View details on the manufacturer's website
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