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IRFZ46N

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The IRFZ46N from JSMicro Semiconductor is a MOSFET with Continous Drain Current 35.4 to 53 A, Drain Source Resistance 12 to 15 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for IRFZ46N can be seen below.

Product Specifications

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Product Details

  • Part Number
    IRFZ46N
  • Manufacturer
    JSMicro Semiconductor
  • Description
    60 V, 35.4 to 53 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    35.4 to 53 A
  • Drain Source Resistance
    12 to 15 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    50 nC
  • Switching Speed
    5.1 to 28.2 ns
  • Power Dissipation
    85 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Input Capacitance :- 2050 pF

Technical Documents
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