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JSM10N20F

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The JSM10N20F from JSMicro Semiconductor is a MOSFET with Continous Drain Current 7.0 to 10.0 A, Drain Source Resistance 0.4 ohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for JSM10N20F can be seen below.

Product Specifications

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Product Details

  • Part Number
    JSM10N20F
  • Manufacturer
    JSMicro Semiconductor
  • Description
    200 V, 7.0 to 10.0 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    7.0 to 10.0 A
  • Drain Source Resistance
    0.4 ohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    22 to 30 nC
  • Switching Speed
    11 to 140 ns
  • Power Dissipation
    140 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Input Capacitance :- 710 pF

Technical Documents
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