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JSM2N90C

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The JSM2N90C from JSMicro Semiconductor is a MOSFET with Continous Drain Current 1.08 to 1.7 A, Drain Source Resistance 5.6 to 7.2 ohm, Drain Source Breakdown Voltage 900 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3.0 to 5.0 V. Tags: Through Hole. More details for JSM2N90C can be seen below.

Product Specifications

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Product Details

  • Part Number
    JSM2N90C
  • Manufacturer
    JSMicro Semiconductor
  • Description
    900 V, 1.08 to 1.7 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.08 to 1.7 A
  • Drain Source Resistance
    5.6 to 7.2 ohm
  • Drain Source Breakdown Voltage
    900 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3.0 to 5.0 V
  • Gate Charge
    12 to 15 nC
  • Switching Speed
    15 to 80 ns
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Note
    Input Capacitance :- 500 pF

Technical Documents
View details on the manufacturer's website
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