JSM30N02D

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The JSM30N02D from JSMicro Semiconductor is a MOSFET with Continous Drain Current 80 to 150 A, Drain Source Resistance 3.8 ohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.5 V. Tags: Surface Mount. More details for JSM30N02D can be seen below.

Product Specifications

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Product Details

  • Part Number
    JSM30N02D
  • Manufacturer
    JSMicro Semiconductor
  • Description
    30 V, 80 to 150 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 to 150 A
  • Drain Source Resistance
    3.8 ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.5 V
  • Gate Charge
    30 nC
  • Switching Speed
    23 to 74 ns
  • Power Dissipation
    70 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    Load Switch, PWM Application, Power management
  • Note
    Input Capacitance :- 2820 pF

Technical Documents

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