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JSM3415E

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The JSM3415E from JSMicro Semiconductor is a MOSFET with Continous Drain Current -4.0 A, Drain Source Resistance 41 to 53 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.3 to -0.9 V. Tags: Surface Mount. More details for JSM3415E can be seen below.

Product Specifications

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Product Details

  • Part Number
    JSM3415E
  • Manufacturer
    JSMicro Semiconductor
  • Description
    -20 V, -4.0 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.0 A
  • Drain Source Resistance
    41 to 53 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.3 to -0.9 V
  • Switching Speed
    11.2 to 32.7 ns
  • Power Dissipation
    0.35 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    PWM application, Load switch, Power management
  • Note
    Input Capacitance :- 750 pF

Technical Documents
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