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JSM7NS65

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The JSM7NS65 from JSMicro Semiconductor is a MOSFET with Continous Drain Current 5.0 to 8.0 A, Drain Source Resistance 0.50 to 0.58 ohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for JSM7NS65 can be seen below.

Product Specifications

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Product Details

  • Part Number
    JSM7NS65
  • Manufacturer
    JSMicro Semiconductor
  • Description
    650 V, 5.0 to 8.0 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.0 to 8.0 A
  • Drain Source Resistance
    0.50 to 0.58 ohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    8.6 nC
  • Switching Speed
    17.9 to 56.2 ns
  • Power Dissipation
    26 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220F
  • Note
    Input Capacitance :- 410.8 pF

Technical Documents
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