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JSM8N65F

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The JSM8N65F from JSMicro Semiconductor is a MOSFET with Continous Drain Current 5.1 to 8.0 A, Drain Source Resistance 1.1 to 1.3 ohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Through Hole. More details for JSM8N65F can be seen below.

Product Specifications

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Product Details

  • Part Number
    JSM8N65F
  • Manufacturer
    JSMicro Semiconductor
  • Description
    650 V, 5.1 to 8.0 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.1 to 8.0 A
  • Drain Source Resistance
    1.1 to 1.3 ohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    31 nC
  • Switching Speed
    13.5 to 128 ns
  • Power Dissipation
    51 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220F
  • Applications
    High Frequency switching mode power supplies, Active Power Factor Correction
  • Note
    Input Capacitance :- 1400 pF

Technical Documents
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