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JSM8N70D

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The JSM8N70D from JSMicro Semiconductor is a MOSFET with Continous Drain Current 5.4 to 8 A, Drain Source Resistance 0.54 to 1.4 ohm, Drain Source Breakdown Voltage 700 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3.0 to 4.0 V. Tags: Surface Mount. More details for JSM8N70D can be seen below.

Product Specifications

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Product Details

  • Part Number
    JSM8N70D
  • Manufacturer
    JSMicro Semiconductor
  • Description
    700 V, 5.4 to 8 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    5.4 to 8 A
  • Drain Source Resistance
    0.54 to 1.4 ohm
  • Drain Source Breakdown Voltage
    700 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3.0 to 4.0 V
  • Gate Charge
    15 nC
  • Switching Speed
    22 to 108 ns
  • Power Dissipation
    86 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252
  • Applications
    LED/LCD/PDP TV and monitor Lighting, Solar/Renewable/UPS-Micro Inverter System, Charger, Power Supply
  • Note
    Input Capacitance :- 470 pF

Technical Documents
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