NDT2955

Note : Your request will be directed to JSMicro Semiconductor.

The NDT2955 from JSMicro Semiconductor is a MOSFET with Continous Drain Current -4.1 to -7.0 A, Drain Source Resistance 0.055 to 0.065 ohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.0 to -2.5 V. Tags: Surface Mount. More details for NDT2955 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NDT2955
  • Manufacturer
    JSMicro Semiconductor
  • Description
    -60 V, -4.1 to -7.0 A, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4.1 to -7.0 A
  • Drain Source Resistance
    0.055 to 0.065 ohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.0 to -2.5 V
  • Gate Charge
    38 to 56 nC
  • Switching Speed
    7 to 110 ns
  • Power Dissipation
    10.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223
  • Applications
    Load Switch
  • Note
    Input Capacitance :- 1500 pF

Technical Documents

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