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IXFB170N30P

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The IXFB170N30P from Littelfuse is a MOSFET with Continous Drain Current 170 A, Drain Source Resistance 18 Milliohm, Drain Source Breakdown Voltage 300 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Through Hole. More details for IXFB170N30P can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXFB170N30P
  • Manufacturer
    Littelfuse
  • Description
    -20 to 20 V, 258 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    170 A
  • Drain Source Resistance
    18 Milliohm
  • Drain Source Breakdown Voltage
    300 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    258 nC
  • Power Dissipation
    1250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-264 PLUS
  • Applications
    DC-DC converters, Battery chargers, Switched-mode and resonant-mode power supplies, Uninterrupted power supplies, AC motor control, High speed power switching applications

Technical Documents
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