IXKF 40N60SCD1

Note : Your request will be directed to Littelfuse.

IXKF 40N60SCD1 Image

The IXKF 40N60SCD1 from Littelfuse is a MOSFET with Continous Drain Current 41 A, Drain Source Resistance 70 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.1 to 3.9 V. Tags: Through Hole. More details for IXKF 40N60SCD1 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IXKF 40N60SCD1
  • Manufacturer
    Littelfuse
  • Description
    -20 to 20 V, 250 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    41 A
  • Drain Source Resistance
    70 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.1 to 3.9 V
  • Gate Charge
    250 nC
  • Temperature operating range
    -40 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    i4-PAC
  • Applications
    Switched mode power supplies (SMPS), Uninterruptible power supplies (UPS), Power factor correction (PFC), Welding, Inductive heating

Technical Documents

Latest MOSFETs

View more products