The RQ5C030TP from ROHM Semiconductor is a P Channel Enhancement Mode MOSFET that is suitable for load switch applications. It has a drain-source breakdown voltage of -20 V with a drain-source resistance of up to 75 mO and a gate threshold voltage of – 2 V.  This small-signal MOSFET has a continuous drain current of  ±3A and a pulsed drain current of  ±12 A. It has a power dissipation of up to 1 W. This RoHS compliant MOSFET offers low on-state resistance and has an in-built G-S protection diode. It is available in a surface-mount package that measures 2.9 x 2.8 x 1 mm.