RQ5C030TP

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RQ5C030TP Image

The RQ5C030TP from ROHM Semiconductor is a P Channel Enhancement Mode MOSFET that is suitable for load switch applications. It has a drain-source breakdown voltage of -20 V with a drain-source resistance of up to 75 mO and a gate threshold voltage of – 2 V.  This small-signal MOSFET has a continuous drain current of  ±3A and a pulsed drain current of  ±12 A. It has a power dissipation of up to 1 W. This RoHS compliant MOSFET offers low on-state resistance and has an in-built G-S protection diode. It is available in a surface-mount package that measures 2.9 x 2.8 x 1 mm.

Product Specifications

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Product Details

  • Part Number
    RQ5C030TP
  • Manufacturer
    ROHM Semiconductor
  • Description
    P-Channel Enhancement Mode MOSFET for Load Switches

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3 to 3 A
  • Drain Source Resistance
    55 to 125 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -2 to -0.7 V
  • Gate Charge
    9.3 nC
  • Power Dissipation
    1 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-346T
  • Applications
    Switching

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