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IXTB30N100L

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The IXTB30N100L from Littelfuse is a MOSFET with Continous Drain Current 30 A, Drain Source Resistance 450 Milliohm, Drain Source Breakdown Voltage 1000 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5.5 V. Tags: Through Hole. More details for IXTB30N100L can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTB30N100L
  • Manufacturer
    Littelfuse
  • Description
    -30 to 30 V, 545 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    30 A
  • Drain Source Resistance
    450 Milliohm
  • Drain Source Breakdown Voltage
    1000 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5.5 V
  • Gate Charge
    545 nC
  • Power Dissipation
    800 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-247 PLUS
  • Applications
    Programmable Loads, Current Regulators, DC-DC Converters, Battery Chargers, DC Choppers, Temperature and Lighting Controls

Technical Documents
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