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IXTH10N100D

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IXTH10N100D Image

The IXTH10N100D from Littelfuse is a MOSFET with Continous Drain Current 10 A, Drain Source Resistance 1.4 milliohm, Drain Source Breakdown Voltage 1000 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage -3.5 to -1.5 V. Tags: Through Hole. More details for IXTH10N100D can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTH10N100D
  • Manufacturer
    Littelfuse
  • Description
    -30 to 30 V, 130 nC, N-Channel Depletion Mode MOSFET

General

  • Types of MOSFET
    N-Channel Depletion Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    10 A
  • Drain Source Resistance
    1.4 milliohm
  • Drain Source Breakdown Voltage
    1000 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    -3.5 to -1.5 V
  • Gate Charge
    130 nC
  • Power Dissipation
    400 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    Audio Amplifiers, Start-up Circuits, Protection Circuits, Ramp Generators, Current Regulators, Active Loads

Technical Documents
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