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NVJD5121NT1G-M06

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The NVJD5121NT1G-M06 from onsemi is a MOSFET with Continous Drain Current 0.304 A, Drain Source Resistance 1000 to 2500 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for NVJD5121NT1G-M06 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVJD5121NT1G-M06
  • Manufacturer
    onsemi
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.304 A
  • Drain Source Resistance
    1000 to 2500 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    0.9 nC
  • Power Dissipation
    0.266 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC-88(SOT-363)
  • Applications
    Low Side Load Switch, DC-DC Converters (Buck and Boost Circuits)

Technical Documents
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