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NVJS4405NT1G

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NVJS4405NT1G Image

The NVJS4405NT1G from onsemi is a MOSFET with Continous Drain Current 1.2 A, Drain Source Resistance 249 to 400 milliohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.65 to 1.5 V. Tags: Surface Mount. More details for NVJS4405NT1G can be seen below.

Product Specifications

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Product Details

  • Part Number
    NVJS4405NT1G
  • Manufacturer
    onsemi
  • Description
    25 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.2 A
  • Drain Source Resistance
    249 to 400 milliohm
  • Drain Source Breakdown Voltage
    25 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.65 to 1.5 V
  • Gate Charge
    0.75 to 1.5 nC
  • Power Dissipation
    0.89 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC-88(SOT-363)
  • Applications
    Boost and Buck Converter, Load Switch, Battery Protection

Technical Documents
View details on the manufacturer's website
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