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IXTH11P50

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IXTH11P50 Image

The IXTH11P50 from Littelfuse is a MOSFET with Continous Drain Current -11 A, Drain Source Resistance 750 milliohm, Drain Source Breakdown Voltage -500 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -5 to -3 V. Tags: Through Hole. More details for IXTH11P50 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTH11P50
  • Manufacturer
    Littelfuse
  • Description
    -500 V, 145 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -11 A
  • Drain Source Resistance
    750 milliohm
  • Drain Source Breakdown Voltage
    -500 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -5 to -3 V
  • Gate Charge
    145 nC
  • Power Dissipation
    300 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Through Hole
  • Package
    TO-247

Technical Documents
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