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IXTP8N65X2M

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IXTP8N65X2M Image

The IXTP8N65X2M from Littelfuse is a MOSFET with Continous Drain Current 8 A, Drain Source Resistance 550 Milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for IXTP8N65X2M can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTP8N65X2M
  • Manufacturer
    Littelfuse
  • Description
    650 V, 12 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8 A
  • Drain Source Resistance
    550 Milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    12 nC
  • Power Dissipation
    32 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switch-Mode and Resonant-Mode Power Supplies, DC-DC Converters, PFC Circuits, AC and DC Motor Drives, Robotics and Servo Controls

Technical Documents
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