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IXTT 110N10P

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IXTT 110N10P Image

The IXTT 110N10P from Littelfuse is a MOSFET with Continous Drain Current 110 A, Drain Source Resistance 15 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 5 V. Tags: Surface Mount. More details for IXTT 110N10P can be seen below.

Product Specifications

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Product Details

  • Part Number
    IXTT 110N10P
  • Manufacturer
    Littelfuse
  • Description
    -20 to 20 V, 110 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    110 A
  • Drain Source Resistance
    15 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 5 V
  • Gate Charge
    110 nC
  • Power Dissipation
    480 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Surface Mount
  • Package
    TO-268
  • Applications
    DC-DC Converters, Battery Chargers, Switch-Mode and Resonant-Mode Power Supplies, Lamp ballasts, AC and DC Motor Drives, Robotics and Servo Controls, Laser drivers

Technical Documents
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