AMDV040N029LVRH

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The AMDV040N029LVRH from Magnachip Semiconductor is an Automotive-Qualified N-Channel Logic Level Trench MOSFET ideal for motor drive systems and switching applications. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of up to 2.5 V, and a drain-source on-resistance of less than 5 milli-ohms. This AEC-Q101-qualified MOSFSET has a continuous drain current of up to 112 A and a power dissipation of less than 65 W. It is based on Trench power MOSFET technology and is 100% avalanche-tested to ensure enhanced avalanche ruggedness. This PPAP-capable MOSFET is available in a surface-mount package that measures 3.10 x 3.10 mm.

Product Specifications

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Product Details

  • Part Number
    AMDV040N029LVRH
  • Manufacturer
    Magnachip Semiconductor
  • Description
    40 V Automotive-Qualified Logic Level N-Channel Trench MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Dimensions
    3.10 x 3.10 mm
  • Number of Channels
    Single
  • Continous Drain Current
    112 A
  • Drain Source Resistance
    5 milli-ohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 V
  • Gate Charge
    5 nC
  • Power Dissipation
    65 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN33
  • Applications
    Switching applications, Motor drive systems

Technical Documents

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