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MDD4N20YRH

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The MDD4N20YRH from Magnachip Semiconductor is a MOSFET with Continous Drain Current 1.9 to 3.0 A, Drain Source Resistance 1.1 to 1.35 ohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.0 to 2.0 V. Tags: Surface Mount. More details for MDD4N20YRH can be seen below.

Product Specifications

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Product Details

  • Part Number
    MDD4N20YRH
  • Manufacturer
    Magnachip Semiconductor
  • Description
    -20 to 20 V, 3.2 nC, N-Channel Enhancement Mode, MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.9 to 3.0 A
  • Drain Source Resistance
    1.1 to 1.35 ohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.0 to 2.0 V
  • Gate Charge
    3.2 nC
  • Switching Speed
    6 to 90 ns
  • Power Dissipation
    27 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Power Supply, PFC, LED TV

Technical Documents
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