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MMIS60R900PTH

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The MMIS60R900PTH from Magnachip Semiconductor is a MOSFET with Continous Drain Current 2.7 to 4.5 A, Drain Source Resistance 0.81 to 0.9 ohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.0 to 4.0 V. Tags: Surface Mount. More details for MMIS60R900PTH can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMIS60R900PTH
  • Manufacturer
    Magnachip Semiconductor
  • Description
    -30 to 30 V, 12.3 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.7 to 4.5 A
  • Drain Source Resistance
    0.81 to 0.9 ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.0 to 4.0 V
  • Gate Charge
    12.3 nC
  • Switching Speed
    15 to 151 ns
  • Power Dissipation
    38 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    IPAK
  • Applications
    PFC Power Supply Stages, Switching Applications, Adapter, DC-DC Converters

Technical Documents
View details on the manufacturer's website
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